Atomic-scale investigations solve key puzzle of LED efficiency

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May 23, 2013 — From the high-resolution glow of flat screen televisions to light bulbs that last for years, light-emitting diodes (LEDs) continue to transform technology. The celebrated efficiency and versatility of LEDs -- and other solid-state technologies including laser diodes and solar photovoltaics -- make them increasingly popular. Their full potential, however, remains untapped, in part because the semiconductor alloys that make these devices work continue to puzzle scientists.
A contentious controversy surrounds the high intensity of one leading LED semiconductor -- indium gallium nitride (InGaN) -- with experts split on whether or not indium-rich clusters within the material provide the LED's remarkable efficiency. Now, researchers from the Massachusetts Institute of Technology (MIT) and the U.S. Department of Energy's (DOE) Brookhaven National Laboratory have demonstrated definitively that clustering is not the source. The results -- published online May 16 in Applied Physics Letters -- advance fundamental understanding of LED technology and open new research pathways.

"This discovery helps solve a significant mystery in the field of LED research and demonstrates breakthrough experimental techniques that can advance other sensitive and cutting-edge electronics," said Silvija Grade
 
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